Modelling and simulation of silicon solar cells using PC1D

Basic silicon solar cell has been designed and simulated using PC1D simulator. Optimum values for the thicknes of base layer and temperature have been decided from I-V and P-V curve of basic silicon solar cell. It has been observed that as thickness increases, Isc increases whereas Pmax and Voc decreases. When temperature increases; Isc remains constant whereas Pmax and Voc decreases. These optimum values enhance the efficiency and fill factor of the silicon solar cell. Simulations in PC1D is an effective way to enhance the performance of silicon solar cell.