单晶硅
研磨
材料科学
机制(生物学)
过程(计算)
冶金
工艺工程
工程类
计算机科学
物理
硅
操作系统
量子力学
作者
Xin Yang,Renke Kang,Shang Gao,Zihe Wu,Xianglong Zhu
标识
DOI:10.1007/s11465-022-0677-3
摘要
Monocrystalline beta-phase gallium oxide (β-Ga2O3) is a promising ultrawide bandgap semiconductor material. However, the deformation mechanism in ultraprecision machining has not yet been revealed. The aim of this study is to investigate the damage pattern and formation mechanism of monocrystalline β-Ga2O3 in different grinding processes. Transmission electron microscopy was used to observe the subsurface damage in rough, fine, and ultrafine grinding processes. Nanocrystals and stacking faults existed in all three processes, dislocations and twins were observed in the rough and fine grinding processes, cracks were also observed in the rough grinding process, and amorphous phase were only present in the ultrafine grinding process. The subsurface damage thickness of the samples decreased with the reduction in the grit radius and the grit depth of cut. Subsurface damage models for grinding process were established on the basis of the grinding principle, revealing the mechanism of the mechanical effect of grits on the damage pattern. The formation of nanocrystals and amorphous phase was related to the grinding conditions and material characteristics. It is important to investigate the ultraprecision grinding process of monocrystalline β-Ga2O3. The results in this work are supposed to provide guidance for the damage control of monocrystalline β-Ga2O3 grinding process.
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