光电探测器
响应度
光电子学
光探测
光子学
材料科学
波导管
红外线的
范德瓦尔斯力
硅光子学
光子集成电路
集成电路
光学
物理
分子
量子力学
作者
Jianghong Wu,Hui Ma,Chuyu Zhong,Min Wei,Chunlei Sun,Yuting Ye,Yan Xu,Bo Tang,Ye Luo,Boshu Sun,Jialing Jian,Hongliang Dai,Hongtao Lin,Lan Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-07-05
卷期号:22 (16): 6816-6824
被引量:19
标识
DOI:10.1021/acs.nanolett.2c02099
摘要
Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz–0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s–1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
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