材料科学
碳纳米管
纳米技术
电接点
纳米管
纳米尺度
导电原子力显微镜
复合材料
光电子学
作者
Yunfan Guo,Enzheng Shi,Jiadi Zhu,Pin-Chun Shen,Jiangtao Wang,Yuxuan Lin,Yunwei Mao,Shibin Deng,Bo Li,Jae Hyun Park,Ang-Yu Lu,Shuchen Zhang,Qingqing Ji,Zhe Li,Chenguang Qiu,Song Qiu,Qunqing Li,Letian Dou,Yue Wu,Jin Zhang,Tomas Palacios,Anyuan Cao,Jian Feng Kong
标识
DOI:10.1038/s41565-021-01034-8
摘要
The assembly of single-walled carbon nanotubes (CNTs) into high-density horizontal arrays is strongly desired for practical applications, but challenges remain despite myriads of research efforts. Herein, we developed a non-destructive soft-lock drawing method to achieve ultraclean single-walled CNT arrays with a very high degree of alignment (angle standard deviation of ~0.03°). These arrays contained a large portion of nanometre-sized CNT bundles, yielding a high packing density (~400 µm−1) and high current carrying capacity (∼1.8 × 108 A cm−2). This alignment strategy can be generally extended to diverse substrates or sources of raw single-walled CNTs. Significantly, the assembled CNT bundles were used as nanometre electrical contacts of high-density monolayer molybdenum disulfide (MoS2) transistors, exhibiting high current density (~38 µA µm−1), low contact resistance (~1.6 kΩ µm), excellent device-to-device uniformity and highly reduced device areas (0.06 µm2 per device), demonstrating their potential for future electronic devices and advanced integration technologies.
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