Temperature dependence of the spectral response of lateral, MBE-grown, ion-milled, planar, Hg1−xCdxTe photodiodes

Measurements are presented of the spectral response of MBE (molecular beam epitaxy)-grown, ion-milled, lateral photodiodes fabricated in the Hg1−xCdxTe material system with x≈0.31. The optical collection length is extracted from measurements taken from diodes of variable diameter. From the temperature dependence of the optical collection length, it is suggested that radiative recombination and Auger recombination processes determine the lifetime of the minority charge carriers.