A 1.4µm front-side illuminated image sensor with novel light guiding structure consisting of stacked lightpipes

A frontside illuminated image (FSI) sensor with novel light guiding structures consisting of stacked lightpipes was developed using 45nm Cu processing on 300 mm wafers. We demonstrated a high quantum efficiency (QE) of 75% and maximum incident angle of 40°, which exceeds the performance of backside illuminated image (BSI) sensors [1,2,3].