单层
二硫化钼
拉曼光谱
钼
极限抗拉强度
化学
拉伤
拉伸应变
半导体
材料科学
过渡金属
二硫键
结晶学
计算化学
化学物理
纳米技术
复合材料
有机化学
冶金
物理
光学
光电子学
催化作用
内科学
医学
生物化学
作者
Ting Hu,Rui Li,Jinming Dong
摘要
The geometric, electronic, and vibrational properties of monolayer 1T-molybdenum disulfide (MoS2) have been studied by using the first-principles calculations. A new (2 × 1) dimerized structure of monolayer 1T-MoS2, called as 1T'-MoS2, has been found, which is semi-conducting and more stable than the previously found ones. Interestingly, a semiconductor-metal transition is found under an applied tensile strain at about 4% or a compressive strain at about 5%, while the dimerization structure has been retained under both the tensile and compressive strains. Moreover, the vibrational properties of three kinds of monolayer MoS2, i.e., the 1T-MoS2, 1T'-MoS2, as well as the 1H-MoS2, have been studied, based upon which the different isomer structures of monolayer MoS2 can be easily distinguishable in experiments by analyzing their characteristic Raman spectra.
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