Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

Abstract This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm 2 ) was achieved with V oc = 664 mV, short circuit current J sc = 35.7 mA/cm 2 and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)