Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography

In this paper, we present our new setup and technique for obtaining a real-time 3-D volume shape of the SiC crystal using X-ray computed tomography (CT). Hence, it is possible to determine in-situ the shape of the growth interface with high precision at growth temperatures above 2000 °C in a conventional 3" physical vapor transport (PVT) growth system. We show that the size and shape of a facet can be monitored at different stages during growth and furthermore the crystals face boundary can be determined with high precision throughout the whole growth process.