X射线光电子能谱
溅射
电子探针
材料科学
薄膜
溅射沉积
兴奋剂
分析化学(期刊)
沉积(地质)
表征(材料科学)
内容(测量理论)
傅里叶变换红外光谱
化学工程
冶金
光电子学
纳米技术
化学
生物
工程类
数学分析
色谱法
古生物学
数学
沉积物
作者
A. Boronat,Santiago Silvestre,Luís Castañer
标识
DOI:10.1016/j.jnoncrysol.2012.09.017
摘要
GaAs thin films with Ti incorporated, to which we refer to as GaAs(Ti), have been deposited by R.F. sputtering on fused silica and c-GaAs substrates under different process conditions. The films were characterized by EPMA, XPS and XRD to study the composition and structural dependence on the deposition conditions, paying special attention on the Ti content of the films. The optical responses of the films were analyzed by spectrofotometric, PDS and FTIR measurements. The Ti content is in all the samples above 1020 atoms/cm3, so we can consider them as GaAs films highly Ti doped. It has been observed that an evolution of the Ga/As atomic content in relation with the Ti incorporation, which together with the results obtained from XPS measurements, indicates a possible substitution of Ga by Ti atoms in the deposited films.
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