太阳能电池
微观结构
材料科学
椭圆偏振法
图层(电子)
原位
非晶硅
硅
表面粗糙度
无定形固体
表面光洁度
光电子学
复合材料
分析化学(期刊)
晶体硅
纳米技术
化学
结晶学
薄膜
有机化学
色谱法
作者
Stefan Bauer,Rajiv O. Dusane,W. Herbst,Frank Diehl,Bernd Schröder,H. Oechsner
标识
DOI:10.1016/0927-0248(96)00055-4
摘要
In this paper we report on the effect of monitoring the i-layer region near the p-i interface with the help of in-situ kinetic and spectroscopic ellipsometry on the performance of hot-wire deposited hydrogenated amorphous silicon p-i-n solar cells. It is very clearly observed that the microstructure at the p-i interface region in terms of the SiSi bond packing density and surface roughness significantly affects the cell performance. The filament temperature, TFil, was the main parameter varied to control the above mentioned two properties near the p-i interface as well as in the bulk i-layer. In order to achieve significant enhancement in the cell performance we extended the idea of the “soft start”, earlier employed for the glow discharge deposited solar cells, to the hot-wire deposited i-layer. We were able to control the i-layer properties at the p-i interface and in the bulk independently and correlate these to the cell performance. It is shown that a major increase in cell performance can be achieved by improving the microstructure of the growing film directly at the p-i interface. Most interestingly, no significant deterioration in cell efficiency has been observed if only the p-i interface was properly controlled but the i-layer was of lower quality. These results are also shown to be consistent with model calculations of a numerical simulation. Our results therefore provide a clue to prepare hot-wire a-Si:H based solar cells with high efficiency and in the whole at high growth rates, which is needed for a more economic a-Si:H solar cell production.
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