反键分子轨道
单独一对
锑
态密度
价(化学)
带隙
化学
电子结构
密度泛函理论
电子能带结构
化学物理
离子
材料科学
结晶学
无机化学
计算化学
电子
凝聚态物理
分子
原子轨道
物理
光电子学
有机化学
量子力学
作者
Jeremy P. Allen,John J. Carey,Aron Walsh,David O. Scanlon,Graeme W. Watson
摘要
This study details density functional theory calculations on all the polymorphs of the binary oxides of antimony (Sb2O3, Sb2O4, and Sb2O5) to assess the electronic structures and differences in bonding between SbIII and SbV ions with oxygen. The results show that lone-pair formation is via a similar mechanism to other main group elements which exhibit an oxidation state of two less than the group valence, through direct interaction of Sb 5s and O 2p states, with the antibonding interaction stabilized by Sb 5p states. Furthermore, structural distortion of the Sb site directly affects the strength of the resulting lone pair. In addition to the analysis of the density of states and charge density, band structures and optical absorption spectra are also detailed. The results indicate that all materials are indirect band gap materials, with the exception of the β-polymorphs of Sb2O3 and Sb2O4. In addition, the fundamental and optical band gaps of the materials are found to decrease from Sb2O3 to Sb2O4 to Sb2O5. Calculated band-edge effective masses suggest that β-Sb2O3 may exhibit reasonable p-type properties. Furthermore, β-Sb2O3, γ-Sb2O3, and Sb2O5 possess low electron effective masses which are conducive with strong n-type conduction.
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