光电流
极化
铁电性
材料科学
半导体
光电子学
激发态
光电化学
偏压
电极
纳米技术
电压
化学
电化学
原子物理学
电气工程
物理化学
电介质
工程类
物理
作者
Dawei Cao,Zhijie Wang,Nasori Nasori,Liaoyong Wen,Yan Mi,Yong Lei
标识
DOI:10.1002/anie.201406044
摘要
Abstract Instead of conventional semiconductor photoelectrodes, herein, we focus on BiFeO 3 ferroelectric photoelectrodes to break the limits imposed by common semiconductors. As a result of their prominent ferroelectric properties, the photoelectrodes are able to tune the transfer of photo‐excited charges generated either in BiFeO 3 or the surface modifiers by manipulating the poling conditions of the ferroelectric domains. At 0 V vs Ag/AgCl, the photocurrent could be switched from 0 μA cm −2 to 10 μA cm −2 and the open‐circuit potential changes from 33 mV to 440 mV, when the poling bias of pretreatment is manipulated from −8 V to +8 V. Additionally, the pronounced photocurrent from charge injection of the excited surface modifiers could be quenched by switching the poling bias from +8 V to −8 V.
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