光电探测器
光探测
纳米发生器
材料科学
光电子学
摩擦电效应
发光二极管
输出阻抗
光强度
光功率
电压
光学
压电
电气工程
激光器
物理
工程类
复合材料
作者
Lei Han,Mingfa Peng,Zhen Wen,Yina Liu,Yi Zhang,Qianqian Zhu,Lei Hao,Sainan Liu,Li Zheng,Xuhui Sun,Hexing Li
出处
期刊:Nano Energy
[Elsevier BV]
日期:2019-05-01
卷期号:59: 492-499
被引量:54
标识
DOI:10.1016/j.nanoen.2019.02.072
摘要
Constructing electronic systems without an external power source is urgently required toward self-powered photodetection. In this work, we proposed a self-driven photodetection system with a MoS2 nanosheets photodetector as light intensity sensor, a vertical contact-separate mode triboelectric nanogenerator (CS-TENG) as power source, and several LEDs as alarm. The MoS2 based planar photodetector was fabricated by conventional photolithography technique and lift-off process. It is highly sensitive for visible light illumination with high current on-off ratio and excellent reproducibility characteristics under light on-off switching. When conjuncting these functional devices, the induced output voltage of the CS-TENG is tuned by the load resistance of the photodetector, which is responded to the light intensity. The mechanism can be ascribed to the impedance matching effect between specific output characteristics of TENG and working status of photodetector. By adding a Zener diode acts as a voltage regulator, the self-driven renders the voltage and current varying from 1.58 to 20.60 V and 0.06–4.78 μA in a range of light intensity from 0 to 3.19 W/m2, respectively. Finally, it is demonstrated that the output of CS-TENG varies with the variable working states of the MoS2 photodetector and then accurately reflects on the lighted number of LEDs.
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