材料科学
离子注入
离子束
聚焦离子束
离子
锂(药物)
离子束沉积
梁(结构)
硅
分析化学(期刊)
光电子学
离子源
作者
Michael Titze,Daniel Perry,Elizabeth A. Auden,Jose Pacheco,John Abraham,Edward S. Bielejec
出处
期刊:Journal of Vacuum Science & Technology B
日期:2021-01-11
卷期号:39 (1): 012802-
摘要
We present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲ 10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length. The source performance is evaluated through a high-resolution ion beam induced charge collection experiment on an Si-based detector. Further application of the source for ion beam analysis is numerically explored; the example investigated is based on probing a semiconductor heterostructure through a Rutherford backscattering experiment, where the Li beam can reveal information that is inaccessible with either low energy or high energy He projectiles used as probes.
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