Metal-semiconductor oxide (WO3@W) induces an efficient electro–photo synergistic catalysis for MOR and ORR

How to make full use of sunlight for practical application in the field of energy is a research focus. The electro-photo synergistic catalysis under irradiation is a promising strategy. Generally, the charge separation of semiconductor or SPR effects of metal were used to interpret reasons of electro-photo catalysis for MOR and ORR. There should exist metal-semiconductor (M-S) interfaces in photo-responsive Pt-based catalysts. However, the effects of the M-S contact modes on the electro-photo catalysis have not been revealed. In this work, the strategy of oxide-derived metal nanostructures (M-MOx) is used to construct WO3@W in situ to ensure the close contact at the interface between W and WO3, resulting in the unique two contact mode (Ohmic contact between W and WO3 and Schottky contact between Pt and WO3) in Pt-WO3@W/graphene (simplified as Pt-WO3@W/GNs). By contrast with 30% PtRu/C and the counterpart Pt/GNs-WO3, the Pt-WO3@W/GNs exhibits more efficient bi-functional electro-photo catalysis toward MOR and ORR under simulated sunlight irradiation. Especially, the mass activity of Pt-WO3@W/GNs under irradiation is evidently better than that of the previous Pt-based photo-responsive electrocatalysts. The Ohmic contact between W and WO3 and the Schottky contact between Pt and WO3 in Pt-WO3@W/GNs play an important role to afford superior electro-photo catalysis. So the oxide-derived M-MOx can ingeniously be used as an efficient electro-photo catalyst for direct methanol fuel cells (DMFCs) application, and it makes sense to conclude that the metal-semiconductor (M-S) contact mode is of great benefit for exploring efficient electro-photo catalysts.