氢氟酸
材料科学
腐蚀
氮化硅
浅沟隔离
硅
蚀刻(微加工)
氧化物
氮化物
氧气
冶金
无机化学
沟槽
纳米技术
图层(电子)
化学
有机化学
作者
Philippe Garnier,Thomas Massin,Corentin Chatelet,Emmanuel Oghdayan,Jeffrey M. Lauerhaas,Carlos Morote,Jeffery W. Butterbaugh
出处
期刊:Solid State Phenomena
日期:2021-02-01
卷期号:314: 107-112
标识
DOI:10.4028/www.scientific.net/ssp.314.107
摘要
Silicon nitride is commonly etched by hot orthophosphoric acid. Hot diluted hydrofluoric acid is hereby used as an alternative. Nonetheless, in presence of silicon surfaces, some corrosion has been evidenced, degrading significantly active areas during the STI (Shallow Trench isolation) integration. Oxygen in hot deionized water or hot HF generates this corrosion and selecting a relevant chemical oxide before dispensing hot diluted HF is key in solving the concern.
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