非阻塞I/O
材料科学
薄膜
循环伏安法
辅助电极
带隙
氧化镍
化学工程
色素敏化染料
太阳能电池
电解质
电极
基质(水族馆)
纳米技术
光电子学
氧化物
电化学
冶金
化学
有机化学
工程类
物理化学
催化作用
地质学
海洋学
作者
Ritu Goel,Ranjana Jha,Medha Bhushan,Rekha Bhardwaj,Chhaya Ravi Kant
标识
DOI:10.1016/j.matpr.2021.08.094
摘要
P-type semiconductor NiO is a wide bandgap, cost-effective and promising material as a counter electrode in the DSSC (dye-sensitized solar cells). In a solar cell device, a counter electrode helps in allowing holes to pass through the electrolyte towards the load and blocking the electrons to pass through it. In the present work, a thin film of NiO has been synthesized on an FTO substrate via hydrothermal technique in the ammonia evaporated environment. FESEM images show nano petals, porous like structures grown on the thin film of NiO which provides well absorption of the electrolyte on it which acts as a redox mediator. Diffraction peaks in the XRD plot confirm the synthesized thin film is NiO. The Calculated bandgap of the synthesized thin film of NiO is found to be 4.01 eV. Cyclic voltammetry (CV) helps in analysing the conductivity of synthesized NiO thin film which can be used in the application of solar cells.
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