反共振
取代基
电导
材料科学
分子
量子干涉
量子隧道
轨道能级差
化学物理
干扰(通信)
纳米技术
分子物理学
量子
计算化学
物理
立体化学
凝聚态物理
量子力学
光电子学
化学
工程类
频道(广播)
电气工程
复合材料
压电
作者
Yifan Zhou,Wen-Yan Chang,Jingzhe Chen,Jun-Ren Huang,Jia-Ying Fu,Jinna Zhang,Lin-Qi Pei,Yahao Wang,Shan Jin,Xiao‐Shun Zhou
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2021-11-19
卷期号:33 (9): 095201-095201
被引量:2
标识
DOI:10.1088/1361-6528/ac3b84
摘要
Quantum interference (QI) in single molecular junctions shows a promising perspective for realizing conceptual nanoelectronics. However, controlling and modulating the QI remains a big challenge. Herein, two-type substituents at different positions ofmeta-linked benzene, namely electron-donating methoxy (-OMe) and electron-withdrawing nitryl (-NO2), are designed and synthesized to investigate the substituent effects on QI. The calculated transmission coefficientsT(E) indicates that -OMe and -NO2could remove the antiresonance and destructive quantum interference (DQI)-induced transmission dips at position 2. -OMe could raise the antiresonance energy at position 4 while -NO2groups removes the DQI features. For substituents at position 5, both of them are nonactive for tuning QI. The conductance measurements by scanning tunneling microscopy break junction show a good agreement with the theoretical prediction. More than two order of magnitude single-molecule conductance on/off ratio could be achieved at the different positions of -NO2substituent groups at room temperature. The present work proves chemical substituents can be used for tuning QI features in single molecular junctions, which provides a feasible way toward realization of high-performance molecular devices.
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