量子反常霍尔效应
物理
拓扑绝缘体
凝聚态物理
Berry连接和曲率
铁磁性
格子(音乐)
材料科学
联轴节(管道)
量子霍尔效应
拓扑(电路)
量子力学
几何相位
电子
组合数学
数学
声学
冶金
作者
Shou-juan Zhang,Changwen Zhang,Changwen Zhang,Wei-xiao Ji,Ping Li,Pei‐ji Wang,Sheng-shi Li,Yan Shen
出处
期刊:Physical review
日期:2017-11-27
卷期号:96 (20)
被引量:173
标识
DOI:10.1103/physrevb.96.205433
摘要
The quantum anomalous Hall (QAH) effect has attracted extensive attention due to time-reversal symmetry broken by a staggered magnetic flux emerging from ferromagnetic ordering and spin-orbit coupling. However, the experimental observations of the QAH effect are still challenging due to its small nontrivial bulk gap. Here, based on density functional theory and Berry curvature calculations, we propose the realization of intrinsic QAH effect in two-dimensional hexagonal metal-oxide lattice, $\mathrm{N}{\mathrm{b}}_{2}{\mathrm{O}}_{3}$, which is characterized by the nonzero Chern number $(C=1)$ and chiral edge states. Spin-polarized calculations indicate that it exhibits a Dirac half-metal feature with temperature as large as ${T}_{C}=392\phantom{\rule{0.16em}{0ex}}\mathrm{K}$ using spin-wave theory. When the spin-orbit coupling is switched on, $\mathrm{N}{\mathrm{b}}_{2}{\mathrm{O}}_{3}$ becomes a QAH insulator. Notably, the nontrivial topology is robust against biaxial strain with its band gap reaching up to ${E}_{g}=75\phantom{\rule{0.16em}{0ex}}\mathrm{meV}$, which is far beyond room temperature. A tight-binding model is further constructed to understand the origin of nontrivially electronic properties. Our findings on the Dirac half-metal and room-temperature QAH effect in the $\mathrm{N}{\mathrm{b}}_{2}{\mathrm{O}}_{3}$ lattice can serve as an ideal platform for developing future topotronics devices.
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