聚结(物理)
外延
材料科学
光致发光
透射电子显微镜
光电子学
表面粗糙度
表面光洁度
化学气相沉积
砷化镓
图层(电子)
纳米技术
结晶学
光学
化学
复合材料
物理
天体生物学
作者
Yunrui He,Jun Wang,Haiyang Hu,Qi Wang,Yongqing Huang,Xiaomin Ren
摘要
The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.
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