压电
材料科学
电容感应
微电子机械系统
氮化物
氮化铝
铝
电子工程
光电子学
PMUT公司
复合材料
电气工程
工程类
图层(电子)
作者
Nathan Jackson,Oskar Z. Olszewski,Lynette Keeney,Alan Blake,A. Mathewson
标识
DOI:10.1109/icmts.2015.7106139
摘要
Aluminum nitride (AlN) is a piezoelectric material that is commonly used in various MEMS applications. However, determining the properties of the thin film typically requires multiple test structures, and there are various methods for obtaining the piezoelectric properties. This paper highlights the development of a capacitive based test structure that is capable of determining the different material properties. In addition this paper compares various test methods used to determine the piezoelectric properties of AlN.
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