Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS)

We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS). The TED MOS structure provides three types of channels: trench-side-wall (TSW); top; and bottom. The mobility of the TSW channels is about three times higher than that of the top channel. In contrast, the mobility of the bottom channel is negligibly small. We argue that the difference is due to the interface trap density by using the amplitude-sweep charge pumping method. In the TSW channels, the interface trap density is much lower than in the top and bottom channels.