On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces

physica status solidi (a)Volume 214, Issue 8 1700058 Original Paper On the recombination behavior of p+-type polysilicon on oxide junctions deposited by different methods on textured and planar surfaces Yevgeniya Larionova, Corresponding Author Yevgeniya Larionova larionova@isfh.de Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Corresponding author: e-mail larionova@isfh.de, Phone: +49 5151 999 423, Fax: +49 5151 999 400Search for more papers by this authorMircea Turcu, Mircea Turcu Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this authorSina Reiter, Sina Reiter Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this authorRolf Brendel, Rolf Brendel Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Institute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 4, D-30167 Hannover, GermanySearch for more papers by this authorDominic Tetzlaff, Dominic Tetzlaff Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorJan Krügener, Jan Krügener Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorTobias Wietler, Tobias Wietler Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorUwe Höhne, Uwe Höhne centrotherm pv AG, Vahrenwalder Str. 269A, D-30179 Hannover, GermanySearch for more papers by this authorJan-Dirk Kähler, Jan-Dirk Kähler centrotherm pv AG, Vahrenwalder Str. 269A, D-30179 Hannover, GermanySearch for more papers by this authorRobby Peibst, Robby Peibst Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this author Yevgeniya Larionova, Corresponding Author Yevgeniya Larionova larionova@isfh.de Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Corresponding author: e-mail larionova@isfh.de, Phone: +49 5151 999 423, Fax: +49 5151 999 400Search for more papers by this authorMircea Turcu, Mircea Turcu Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this authorSina Reiter, Sina Reiter Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, GermanySearch for more papers by this authorRolf Brendel, Rolf Brendel Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Institute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 4, D-30167 Hannover, GermanySearch for more papers by this authorDominic Tetzlaff, Dominic Tetzlaff Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorJan Krügener, Jan Krügener Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorTobias Wietler, Tobias Wietler Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this authorUwe Höhne, Uwe Höhne centrotherm pv AG, Vahrenwalder Str. 269A, D-30179 Hannover, GermanySearch for more papers by this authorJan-Dirk Kähler, Jan-Dirk Kähler centrotherm pv AG, Vahrenwalder Str. 269A, D-30179 Hannover, GermanySearch for more papers by this authorRobby Peibst, Robby Peibst Institute for Solar Energy Research Hamelin, Am Ohrberg 1, D-31860 Emmerthal, Germany Institute of Electronic Materials and Devices, Leibniz Universität Hannover, Schneiderberg 32, D-30167 Hannover, GermanySearch for more papers by this author First published: 08 May 2017 https://doi.org/10.1002/pssa.201700058Citations: 41Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinkedInRedditWechat Abstract We investigate the passivation quality of hole-collecting junctions consisting of thermally or wet-chemically grown interfacial oxides, sandwiched between a monocrystalline-Si substrate and a p-type polycrystalline-silicon (Si) layer. The three different approaches for polycrystalline-Si preparation are compared: the plasma-enhanced chemical vapor deposition (PECVD) of in situ p+-type boron-doped amorphous Si layers, the low pressure chemical vapor deposition (LPCVD) of in situ p+-type B-doped polycrystalline Si layers, and the LPCVD of intrinsic amorphous Si, subsequently ion-implanted with boron. We observe the lowest J0e values of 3.8 fA cm−2 on thermally grown interfacial oxide on planar surfaces for the case of intrinsic amorphous Si deposited by LPCVD and subsequently implanted with boron. Also, we obtain a similar high passivation of p+-type poly-Si junctions on wet-chemically grown oxides as well as for all the investigated polycrystalline-Si deposition approaches. Conversely, on alkaline-textured surfaces, J0e is at least 4 times higher compared to planar surfaces. This finding holds for all the junction preparation methods investigated. We show that the higher J0e on textured surfaces can be attributed to a poorer passivation of the p+ poly/c-Si stacks on (111) when compared to (100) surfaces. Citing Literature Volume214, Issue8August 20171700058 RelatedInformation