P‐164: Highly Efficient Quantum Dot Light‐emitting Diodes Enhanced via Ultraviolet Postprocessing

Recently, low efficiency and stability due to unbalanced carrier injection remain urgent problems in inorganic quantum dot light†emitting diodes (QLEDs). To address these issues, the device was irradiated with ultraviolet light in this study, which improved the interface contact. This resulted in the smaller electron potential barrier, increased hole injection and more balanced carrier injection in the device. Ultimately, the device efficiency was improved, and the operating lifetime of the device was increased by ~91†fold.