材料科学
石墨烯
范德瓦尔斯力
电荷(物理)
联轴节(管道)
化学物理
异质结
纳米技术
凝聚态物理
光电子学
量子力学
分子
物理
复合材料
作者
Binyu Ying,Baojuan Xin,Miaomiao Li,Siyu Zhou,Qiang Liu,Zhihong Zhu,Shiqiao Qin,Weihua Wang,Mengjian Zhu
标识
DOI:10.1021/acsami.4c07233
摘要
Due to the large volume of exposed atoms and electrons at the surface of two-dimensional materials, interfacial charge coupling has been proven as an efficient strategy to engineer the electronic structures of two-dimensional materials assembled in van der Waals heterostructures. Recently, heterostructures formed by graphene stacked with CrOCl have demonstrated intriguing quantum states, including a distorted quantum Hall phase in the monolayer graphene and the unconventional correlated insulator in the bilayer graphene. Yet, the understanding of the interlayer charge coupling in the heterostructure remains challenging. Here, we demonstrate clear evidences of efficient hole doping in the interfacial-coupled graphene/CrOCl heterostructure by detailed Raman spectroscopy and electrical transport measurements. The observation of significant blue shifts and stiffness of graphene Raman modes quantitatively determines the concentration of hole injection of about 1.2 × 10
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