光电探测器
材料科学
量子点
硫化铅
光电子学
钝化
比探测率
暗电流
吸收(声学)
制作
量子效率
纳米技术
图层(电子)
替代医学
复合材料
病理
医学
作者
Urvashi Bothra,Miguel Albaladejo‐Siguan,Yana Vaynzof,Dinesh Kabra
标识
DOI:10.1002/adom.202201897
摘要
Abstract Solution‐processed lead sulfide quantum dots (PbS QDs) are an excellent candidate for photodetector applications because they exhibit broadband absorption, a wide range of tuneable bandgaps, high stability in air, and mechanical flexibility. However, a crucial criterion for the fabrication of high‐performance photodetectors is the selection of the ligands, which can facilitate charge carrier transport between the PbS QDs and passivate the surface defects. In this work, the authors have studied the effect of traps on the performance of PbS QD photodetectors that are fabricated using different types of ligands, using intensity‐dependent photoresponse dynamics. The best devices with lead halide ligands show a dark current density of 5 × 10 −9 A cm −2 at −0.2 V, which is one of the lowest values reported thus far for solution‐processed PbS QD‐based photodetectors. Moreover, these devices show a high linear dynamic range (≈90 dB) and high detectivity (>10 13 Jones), in addition to an f ‐3 dB of greater than 100 kHz without the application of an external voltage bias at a wavelength of 784 nm. These results suggest that with an appropriate selection of ligands, solution‐processed photodetectors with a lower density of traps and a better device performance can be fabricated.
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