Paolo De Martino,Bernard Aventurier,Patrick Le Maitre,Christelle Laugier,Basien Miralles,Clement Ballot,Benoit Racine,Julia Simon
标识
DOI:10.1117/12.2650222
摘要
Efficient Light Emitting Diodes (LED) with a wide color gamut for high-resolution RGB display applications is still a challenging objective for state of the art technologies. The current industrial technology compromises the narrow RGB peaks emission with device efficiency. In this work, we demonstrate a CMOS compatible monolithic hybrid approach the fabrication of GaN Blue micro-LED co-integrated with Green or Red top emitting OLED on 8’’ GaN epitaxy on Si, with LED sizes as low as 5µm. This approach fulfills the need of a good color purity, while taking advantage of the best of both technology efficiencies and emission width.