Operation Principle and Fabrication of TFET

Field-effect transistors, or FETs, are utilized in various electrical applications. Nanoelectronic circuits based on FETs, on either hand, are inefficient in terms of energy consumption since switching applications requires a high supply voltage. We have briefly reviewed the effect of TFETs against conventional MOSFETs from several viewpoints in this study. The supply voltage of conventional FETs, constrained by the subthreshold swing restriction of 60 mV/decade, can be reduced using tunnel FETs, a novel FET (SS) form. TFETs’ capacity to achieve an inverted sub-threshold swing (SS) less than that of traditional MOSFETs’ 60 mV/decade thermal limit (at 300 K) is their most noticeable characteristic. Despite conventional thermal injection, a TFET uses quantum mechanically based band-to-band tunneling to transport charge carriers in device channels. Comparing thin semiconducting sheets or nanowires (TFETs) to complementary metal-oxide-semiconductor (CMOS) transistors, the power consumption of TFETs can be lowered by a factor of 100. As a result, combining TFETs and CMOS techniques to develop low-power integrated circuits could be advantageous. The newest TFET devices with multiple semiconducting channels and geometries are extensively investigated in this review, followed by a brief discussion of the persistent challenges in developing high-performance devices. Finally, career prospects for device design and TFET efficiency are addressed.