Investigating Charge Carrier Transport and Efficiency Boost in Zn-Doped Mapbi2br Solar Cells

The spin coating method was used to deposit MAPbI2Br films on FTO-glass substrates. Zn2+ (zinc) doped films were used at intensity rates of 2% and 4%, respectively. XRD analysis proved that MAPbI2Br films had a cubic structure and a crystalline character. 2% Zn doping into MAPbI2Br film has a modestly large grain size (38.09 nm), Eg (1.95 eV), high refractive index (2.66), and low extinction coefficient (1.67), according to XRD and UV-Vis analyses. In order to facilitate and enhance carrier transit at contacts as well as throughout the bulk material, the perovskite's trap-state densities were decreased. The predicted MAPbI2Br valence and conduction band edges are, respectively, -5.44 and -3.52. The CB edge of the film that was exposed to Zn atoms has been pressed towards the lower value, making it a better material for solar cells. EIS is particularly useful for understanding charge carrier transport, recombination mechanisms, and the influence of different interfaces within the device structure. Jsc is 11.09 mA-cm-2, Voc is 1.09, and PCE is 9.372%. FF is 0.775. The cell made with the 2% Zn doped into MAPbI2Br film demonstrated a superior device.