Stability of Cesium-Based Lead Halide Perovskites under UV Radiation

卤化物 铅(地质) 钙钛矿(结构) 材料科学 辐射 无机化学 化学 光学 结晶学 物理 地貌学 地质学
作者
Zhiyang Qin,J. A. Caraveo-Frescas,Leunam Fernández‐Izquierdo,M. Josefina Arellano-Jiménez,F. S. Aguirre‐Tostado,Martin Gregorio Reyes‐Banda,Manuel Quevedo‐Lopez
出处
期刊:ACS omega [American Chemical Society]
卷期号:9 (24): 26683-26691
标识
DOI:10.1021/acsomega.4c01461
摘要

Lead halide perovskites have been extensively studied for their potential applications, including photodetectors, solar cells, and high-energy radiation detection. These applications are possible because of their unique optoelectronic properties, such as tunable band gap, high optical absorption coefficient, and unique defect self-healing properties, which result in high defect tolerance. Despite these advantages, the long-term stability remains a critical issue that could hinder commercial applications of these materials. Reports on the stability of lead halide perovskites for optoelectronic applications have normally focused on methylammonium (MA)/formamidinium (FA), with very limited information for other systems, in particular, Cs-containing perovskites. In this paper, we report the stability of thick CsPbBr3-xClx polycrystalline thin films (∼8 μm) with several halide Br–Cl ratios after exposure to deep UV radiation. The chemical, crystal structure, optical, and electrical properties are analyzed, and the results are used to propose a degradation mechanism. The chemical analysis on the surface and bulk of the films indicates the formation of cesium oxide after UV exposure, with no significant change in the crystalline structure. The proposed mechanism explains the formation of cesium oxides during UV exposure. The I–V characteristics of diode structures also showed significant degradation after UV exposure, primarily at lower diode rectification ratios. The mechanism proposed in this paper can contribute to developing strategies to enhance the long-term stability of inorganic lead halide perovskites under UV exposure.
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