Transport Study of PEALD IGZO TFT at Cryogenic Temperatures down to 6 K

In this work, we study the transport behavior of plasma-enhanced atomic-layer deposited (PEALD) IGZO TFT at cryogenic temperatures down to 6 K. The PEALD deposited IGZO TFT features decent field-effect mobility $(\mu_{FE})$ of 37.04 cm ² /V.s, excellent subthreshold swing (SS) of 68.7 mV/dec and positive threshold voltage $(V_{TH})$ of 0.48 V. The electrical properties were measured over temperature range from 6 K to 300 K. As temperature reduces to 6K, $\mu_{FE}$ ' drops to 22.3 cm ² /V.S, while SS improves to below 60 mV/dec, with a positive $V_{TH}$ shift, beneficial for ultra-low power circuitry.