材料科学
兴奋剂
钙钛矿(结构)
扩散
瞬态(计算机编程)
吸收(声学)
薄膜
超快激光光谱学
显微镜
光电子学
光学
纳米技术
结晶学
复合材料
热力学
化学
激光器
物理
计算机科学
操作系统
作者
Junhan Xie,Wei Zhou,Haozheng Li,Ziyu Wang,Jiaming Jiang,Yile Zhang,Xiaoqin Shen,Zhijun Ning,Weimin Liu
标识
DOI:10.1002/adom.202303004
摘要
Abstract The determination of the semiconducting materials performance heavily relies on the diffusion coefficient and length of the carrier. Recently, significant progress is made in enhancing solar cell efficiency through improved carrier diffusion in perovskite thin films. However, the spatial‐temporal mechanisms underlying carrier transport remain unclear. Recent advancements in utilizing transient absorption microscopy (TAM) offer promising opportunities to directly visualize the carrier transport dynamics within perovskite films. Here, the wide‐field imaging TAM combined with X‐ray diffraction and scanning electron microscopy is employed to investigate the spatial‐temporal carrier transport dynamics in FA 1−x Cs x PbI 3 perovskites with varying Cs doping ratios. The experimental results indicate that the diffusion constant remains consistent regardless of the excitation power. Moreover, a decrease in the Cs doping ratio leads to an increase in the diffusion length within FA 1−x Cs x PbI 3 perovskites. The measurements reveal a highest diffusion coefficient of up to 0.085 cm 2 s −1 and a maximum diffusion length of ≈1.4 µm in FA 0.97 Cs 0.03 PbI 3 . Comparative analysis of short‐circuit current density, open‐circuit voltage, fill factor, and power conversion efficiency demonstrates that FA 0.97 Cs 0.03 PbI 3 exhibits superior device efficiency. The TAM visualizes spatial/ temporal carrier diffusion dynamics, showing a significant correlation with device efficiency and thus providing valuable insights for further enhancing device performance.
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