材料科学
原子层沉积
光电子学
图层(电子)
薄膜
电荷(物理)
载流子
纳米技术
物理
量子力学
作者
Kuldeep Singh Gour,Pravin S. Pawar,Minwoo Lee,Vijay Karade,Jae Sung Yun,Jaeyeong Heo,Jongsung Park,Jae Ho Yun,Jin Hyeok Kim
标识
DOI:10.1021/acsami.4c02432
摘要
The present study demonstrates that precursor passivation is an effective approach for improving the crystallization process and controlling the detrimental defect density in high-efficiency Cu
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