材料科学
钒
空位缺陷
氧化还原
阴极
动力学
密度泛函理论
电化学
化学物理
纳米技术
化学工程
电极
物理化学
冶金
计算化学
结晶学
化学
物理
量子力学
工程类
作者
Xihao Zhang,Lansong Liu,Kaiyue Zhang,Denghua Zhang,Shaoyu Hou,Jinling Zhao,Hongxiang He,Xiaoliang Wu,Jianguo Liu,Chuanwei Yan
标识
DOI:10.1016/j.ensm.2024.103442
摘要
Vanadium flow batteries (VFBs) have great potential for application in energy storage systems. However, the sluggish cathode redox kinetics still greatly restricts their operation at high current densities. Herein, we boost cathode redox chemistry by modulating single-atom sulfur-vacancy (S-vacancy) defect of MoS2-x in-situ grown on carbon felts via a facile chemical etching method. Firstly, the optimized S-vacancy concentration is figured out via high throughput calculations based on d-band center theory. By precisely controlling etching duration, we achieve a tailored S-vacancy concentration, leading to highly dispersed S-vacancies, increased specific surface area, and improved hydrophilicity. Electrochemical characterizations demonstrate that optimized S-vacancy state can significantly facilitate the VO2+/VO2+ kinetics. Moreover, analysis of electron density difference and integrated crystal orbital Hamiltonian group further reveals that dispersed S-vacancy distribution also contribute to efficient surface electronic structure and enhanced adsorption process. Benefiting from enhanced VO2+/VO2+ kinetics, VFB single cell achieves a superior EE of 78.73% at 300 mA cm−2 and is able to last for 500 cycles without decay. This work demonstrates the promising potential of single-atom S-vacancies catalysts in the fabrication of flow battery electrodes and more importantly sheds light on the fundamental modulation essence of d-band center in MoS2-x towards enhanced cathode redox kinetics.
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