A gallium oxide MESFET transistor with potential barrier layers for high-power and high-frequency applications

Abstract In this article, a novel gallium oxide metal semiconductor field effect transistor (MESFET) is presented. This device is designed for high-power and high-frequency usage and features embedded potential barrier layers on each side of the gate metal within the channel. The gallium oxide semiconductor (Ga 2 O 3 ) is highly valued in semiconductor technologies because of its large band gap (4.9–4.8 eV) and high breakdown field (6–8 MV cm −1 ). These properties make it suitable for high-power and high-frequency operations. We call the proposed structure; the potential barrier layers in Gallium Oxide MESFET (PBL-GO-MESFET). The key idea in the PBL-GO-MESFET transistor is embedding the PB layers to control the electric field distribution. Because of the PB layers, an increased breakdown voltage is observed in the PBL-GO-MESFET device, which is in contrast to conventional GO-MESFET (C-GO-MESFET) devices. The simulation findings indicate that the PBL-GO-MESFET transistor surpasses the C-GO-MESFET transistor in terms of breakdown voltage and radio frequency (RF) traits.