材料科学
离子注入
离子
波导管
折射率
穿透深度
Crystal(编程语言)
光学
离子束
辐照
光束传播法
联轴节(管道)
光电子学
梁(结构)
化学
物理
有机化学
计算机科学
核物理学
冶金
程序设计语言
作者
Chun‐Xiao Liu,Wei Sun,Jieyu Zhang,Lili Fu,Yun Ling,Liaolin Zhang
出处
期刊:Optical Engineering
[SPIE - International Society for Optical Engineering]
日期:2024-01-18
卷期号:63 (01)
标识
DOI:10.1117/1.oe.63.1.017102
摘要
An ion implanter was used to irradiate protons with a dose of 8×1016 ions/cm2 and an energy of 400 keV into a Ce3+:GGG crystal. To our knowledge, this is the first time that ion implantation was applied to a Ce3+:GGG crystal. The penetration depth was determined by the stopping and range of ions in matter simulation. The prism coupling method was utilized to evaluate the propagation modes in the H+-implanted waveguide. The end-face coupling method and the finite-difference beam propagation were employed for the analysis of the waveguide performance. The refractive index distribution was reconstructed by the reflectivity calculation method. The main significance of the investigation is to confirm the potential of the ion-irradiated Ce3+:GGG crystals for fabricating waveguide structures and devices.
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