Stable switching behavior of low-temperature ZrO2 RRAM devices realized by combustion synthesis-assisted photopatterning

We have realized efficient photopatterning and high-quality ZrO2 films through combustion synthesis and manufactured resistive random access memory (RRAM) devices with excellent switching stability at low temperatures (250°C) using these approaches. Combustion synthesis reduces the energy required for oxide conversion, thus accelerating the decomposition of organic ligands in the UV-exposed area, and promoting the formation of metal-oxygen networks, contributing to patterning. Thermal analysis confirmed a reduction in the conversion temperature of combustion precursors, and the prepared combustion ZrO2 films exhibited a high proportion of metal-oxygen bonding that constitutes the oxide lattice, along with an amorphous phase. Furthermore, the synergistic effect of combustion synthesis and UV/O3-assisted photochemical activation resulted in patterned ZrO2 films forming even more complete metal-oxygen networks. RRAM devices fabricated with patterned ZrO2 films using combustion synthesis exhibited excellent switching characteristics, including a narrow resistance distribution, endurance of 103 cycles, and retention for 105 s at 85°C, despite low-temperature annealing. Combustion synthesis not only enables the formation of high-quality metal oxide films with low external energy but also facilitates improved photopatterning.