Jason Paul Clifford,Keith Johnston,Larissa Levina,Edward H. Sargent
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:2007-12-20卷期号:91 (25): 253117-被引量:122
标识
DOI:10.1063/1.2823582
摘要
We elucidate experimentally a quantitative physical picture of the Schottky barrier formed at the junction between a metallic contact and a semiconducting colloidal quantum dot film. We used a combination of capacitance-voltage and temperature-dependent current-voltage measurements to extract the key parameters of the junction. Three differently processed Al∕PbS colloidal quantum dot junction devices provide rectification ratios of 104, ideality factors of 1.3, and minimal leakage currents at room temperature. The Schottky barrier height is 0.4eV and the built-in potential 0.3V. The depletion width ranges from 90to150nm and the acceptor density ranges from 2×1016to7×1016cm−3.