记忆电阻器
神经形态工程学
材料科学
记忆晶体管
电导
纳米技术
硅
计算机科学
电子线路
突触
纳米尺度
电阻随机存取存储器
光电子学
电子工程
电压
神经科学
人工神经网络
电气工程
物理
人工智能
工程类
凝聚态物理
生物
作者
Sung‐Hyun Jo,Ting‐Chang Chang,Idongesit E. Ebong,Bhavitavya B. Bhadviya,Pinaki Mazumder,Wei Lü
出处
期刊:Nano Letters
[American Chemical Society]
日期:2010-03-01
卷期号:10 (4): 1297-1301
被引量:3673
摘要
A memristor is a two-terminal electronic device whose conductance can be precisely modulated by charge or flux through it. Here we experimentally demonstrate a nanoscale silicon-based memristor device and show that a hybrid system composed of complementary metal−oxide semiconductor neurons and memristor synapses can support important synaptic functions such as spike timing dependent plasticity. Using memristors as synapses in neuromorphic circuits can potentially offer both high connectivity and high density required for efficient computing.
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