石墨烯
材料科学
原子力显微镜
导电原子力显微镜
表面粗糙度
纳米技术
石墨烯纳米带
表面光洁度
光电子学
抵抗
光导原子力显微镜
电压
均方根
扫描电子显微镜
分析化学(期刊)
扫描电容显微镜
化学
复合材料
物理
量子力学
扫描共焦电子显微镜
色谱法
图层(电子)
作者
Niclas Lindvall,Alexey Kalabukhov,A. Yurgens
摘要
We mechanically clean graphene devices using an atomic force microscope (AFM). By scanning an AFM tip in contact mode in a broom-like way over the sample, resist residues are pushed away from the desired area. We obtain atomically flat graphene with a root mean square (rms) roughness as low as 0.12 nm after this procedure. The cleaning also results in a shift of the charge-neutrality point toward zero gate voltage, as well as an increase in charge carrier mobility.
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