Modelling of the nanoscale channel length effect on the subthreshold characteristics of junctionless field-effect transistors with a symmetric double-gate structure

Abstract An analytical subthreshold current of deep nanoscale short channel junctionless field-effect transistors (JL FETs) with a symmetric double-gate (DG) structure has been proposed. It is derived from two-dimensional Poisson's equation using a variable separation technique. The proposed models can exactly describe the behaviour of subthreshold I – V characteristics with nanoscale channel length without any empirical fitting parameter. The model accounts for channel length, body thickness, gate oxide thickness and body doping concentrations. The models are verified by comparison with TCAD simulations and show good agreement.