金属
Atom(片上系统)
分子
杂质
蚀刻(微加工)
化学
化学反应
物理化学
材料科学
化学物理
无机化学
光化学
有机化学
计算机科学
嵌入式系统
图层(电子)
作者
Tyuji Hoshino,Yasushiro Nishioka
摘要
First-principles quantum chemical calculations have been performed to reveal the reaction mechanisms of HF molecules with metal impurities (Al or Cu) on Si surfaces. The lowest energy paths of this HF attack reaction have been obtained in two situations when a metal atom adheres to a Si surface with and without an O atom incorporated between the metal atom and the surface. The potential energy changes along these reaction paths were evaluated. It was revealed that a HF molecule has the ability to etch an Al monoxide on the Si surface. On the other hand, HF is not effective in the etching of a metal atom (Al or Cu) which has directly bonded to a Si surface.
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