锌黄锡矿
光致发光
材料科学
光电子学
激子
电介质
量子效率
瓶颈
GSM演进的增强数据速率
带隙
凝聚态物理
物理
计算机科学
捷克先令
电信
嵌入式系统
作者
Tayfun Gokmen,Oki Gunawan,Teodor K. Todorov,David B. Mitzi
摘要
We demonstrate that a fundamental performance bottleneck for hydrazine processed kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells with efficiencies reaching above 11% can be the formation of band-edge tail states, which quantum efficiency and photoluminescence data indicate is roughly twice as severe as in higher-performing Cu(In,Ga)(S,Se)2 devices. Low temperature time-resolved photoluminescence data suggest that the enhanced tailing arises primarily from electrostatic potential fluctuations induced by strong compensation and facilitated by a lower CZTSSe dielectric constant. We discuss the implications of the band tails for the voltage deficit in these devices.
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