光刻胶
紫外线
离子
表面粗糙度
氩
辐照
化学
材料科学
分析化学(期刊)
表面光洁度
图层(电子)
光电子学
纳米技术
复合材料
物理
有机化学
色谱法
核物理学
作者
D. Nest,David B. Graves,Sebastian Engelmann,Robert L. Bruce,F. Weilnboeck,G. S. Oehrlein,Cecily Andes,Eric A. Hudson
摘要
The roles of ultraviolet/vacuum ultraviolet (UV/VUV) photons, Ar+ ion bombardment and heating in the roughening of 193nm photoresist have been investigated. Atomic force microscopy measurements show minimal surface roughness after UV/VUV-only or ion-only exposures at any temperature. Simultaneous UV/VUV, ion bombardment, and heating to surface temperatures of 60–100°C result in increased surface roughness, and is comparable to argon plasma-exposed samples. Ion bombardment creates a modified near-surface layer while UV/VUV radiation results in loss of carbon-oxygen bonds up to a depth of ∼100nm. Enhanced roughness is only observed in the presence of all three effects.
科研通智能强力驱动
Strongly Powered by AbleSci AI