散射
Atom(片上系统)
原子物理学
电子
物理
电子密度
X射线
电子散射
小角度散射
高斯分布
计算物理学
原子序数
光学
量子力学
计算机科学
嵌入式系统
作者
A.G. Fox,Michael A. O’Keefe,Mark A. Tabbernor
出处
期刊:Acta Crystallographica Section A
[Wiley]
日期:1989-11-01
卷期号:45 (11): 786-793
被引量:55
标识
DOI:10.1107/s0108767389007567
摘要
An enlarged set (atomic number Z = 2 to 98) of free-atom X-ray atomic scattering (form) factors for high angles [2 ≤ (sin θ)/λ ≤ 6Å-1] has been calculated based on those of Doyle & Turner [Acta Cryst. (1968). A24, 390-397]. Four-parameter 'exponential polynomial' fits for these are presented which give far more accurate estimates of the scattering factors at high angles than the Gaussian fits normally used. The use of the Mott formula in conjunction with these new high-angle X-ray form factors allows the calculation of improved-accuracy high-angle electron scattering factors. The use of these high-accuracy high-angle scattering factors for important applications such as Fourier charge-density analysis and computer simulation of high-resolution electron microscope (HREM) images is discussed.
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