反铁磁性
凝聚态物理
铁磁性
自旋电子学
材料科学
磁性半导体
范德瓦尔斯力
Atom(片上系统)
结晶学
化学
物理
分子
计算机科学
量子力学
嵌入式系统
作者
Bheema Lingam Chittari,Youngju Park,Dongkyu Lee,Moonsup Han,A. H. MacDonald,E. H. Hwang,Jeil Jung
出处
期刊:Physical review
日期:2016-11-22
卷期号:94 (18)
被引量:314
标识
DOI:10.1103/physrevb.94.184428
摘要
We survey the electronic structure and magnetic properties of two-dimensional (2D) $M\mathrm{P}{X}_{3}$ ($M=\text{V},\text{Cr},\text{Mn},\text{Fe},\text{Co},\text{Ni},\text{Cu},\text{Zn}$, and $X=\text{S},\text{Se},\text{Te}$) transition-metal chalcogenophosphates to shed light on their potential role as single-layer van der Waals materials that possess magnetic order. Our ab initio calculations predict that most of these single-layer materials are antiferromagnetic semiconductors. The band gaps of the antiferromagnetic states decrease as the atomic number of the chalcogen atom increases (from S to Se to Te), leading in some cases to half-metallic ferromagnetic states or to nonmagnetic metallic states. We find that the competition between antiferromagnetic and ferromagnetic states can be substantially influenced by gating and by strain engineering. The sensitive interdependence we find between magnetic, structural, and electronic properties establishes the potential of this 2D materials class for applications in spintronics.
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