Growth Technologies for 300 mm Arsenic Heavily Doped Silicon Single Crystals

Arsenic heavily doped silicon substrates are vital to the power devices and power integrated circuits. The present work focuses on the series growth technologies for 300 mm silicon crystals heavily doped with arsenic. The 22 hot zone has been employed and growth parameters have been optimized to improve the yield of the as-grown ingots. The systemic processes have been applied for the human safety and environmental concerns, which guarantee the exhaust gas and water have met the requirement for the national laws of the environmental protection.