晶体管
硅谷
硅
历史
工程物理
工程类
电气工程
光电子学
物理
政治学
法学
创业
电压
作者
W. F. Brinkman,D.E. Haggan,W.W. Troutman
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:1997-01-01
卷期号:32 (12): 1858-1865
被引量:160
摘要
Fifty years ago, in November 1947, John Bardeen and Walter Brattain discovered the transistor on the fourth floor of Building 1 at Bell Labs in Murray Hill, NJ. Fifty years later, the authors are still working with silicon but it is a very different silicon effort. Currently with the silicon optical bench they are trying to integrate optical components the way transistors have been over the last 50 years. So, silicon technology is still progressing. When considering the invention of the transistor, the authors note that the work of Bardeen and Brattain was really a discovery not an invention. At the time they discovered transistor action, they were investigating the nature of surface states and ways to reduce their presence. It was only later that things really became clear as to what was going on. Fifty years later that discovery is celebrated, and the authors present a brief history of the major events and the key people involved.
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