材料科学
可扩展性
离子键合
相变存储器
光电子学
制作
热传导
离子
纳米技术
计算机科学
化学
复合材料
病理
数据库
有机化学
医学
替代医学
图层(电子)
作者
G. Kalpana,Rohit S. Shenoy,C. T. Rettner,Kumar Virwani,Donald S. Bethune,R. M. Shelby,Geoffrey W. Burr,A. J. Kellock,R. S. King,Khanh Nguyen,A. N. Bowers,M. Jurich,Bryan L. Jackson,Alexander Friz,Teya Topuria,Philip M. Rice,B. N. Kurdi
标识
DOI:10.1109/vlsit.2010.5556229
摘要
Phase change memory (PCM) could potentially achieve high density with large, 3Dstacked crosspoint arrays, but not without a BEOL-friendly access device (AD) that can provide high current densities and large ON/OFF ratios. We demonstrate a novel AD based on Cu-ion motion in novel Cu-containing Mixed Ionic Electronic Conduction (MIEC) materials[1, 2]. Experimental results on various device structures show that these ADs provide the ultra-high current densities needed for PCM, exhibit high ON/OFF ratios with excellent uniformity, are highly scalable, and are compatible with <;400°C Back-End-Of-the-Line (BEOL) fabrication.
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